ZX5T3ZTA Datasheet & Equivalents
PNP
SOT-89
High Power
DIODES
VCEO
40V
Ic Max
5.5A
Pd Max
3W
hFE Gain
200
Quick Reference
The ZX5T3ZTA is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 40V and continuous collector current of 5.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 5.5A | Max current handling |
| Power Dissipation (Pd) | 3W | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 152MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 60mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7.5V | Max emitter-base breakdown |
| Collector Cutoff Current | 20nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 200 | 3.5W | onsemi 📄 PDF |