PBSS303PX,115 Datasheet & Equivalents
PNP
SOT-89
High Power
Nexperia
VCEO
30V
Ic Max
5.1A
Pd Max
2.1W
hFE Gain
200
Quick Reference
The PBSS303PX,115 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by Nexperia. It supports a breakdown voltage of 30V and continuous collector current of 5.1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 30V | Max breakdown voltage |
| Collector Current (Ic) | 5.1A | Max current handling |
| Power Dissipation (Pd) | 2.1W | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 130MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 160mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZXTP2008ZTA | PNP | SOT-89 | 30V | 5.5A | 70 | 12W | DIODES 📄 PDF |
| ZX5T3ZTA | PNP | SOT-89 | 40V | 5.5A | 200 | 3W | DIODES 📄 PDF |
| 2SA2016-TD-E | PNP | SOT-89 | 50V | 7A | 200 | 3.5W | onsemi 📄 PDF |