2SA1213-Y(TE12L,ZC Datasheet & Equivalents

PNP SOT-89 General Purpose TOSHIBA
VCEO
50V
Ic Max
2A
Pd Max
1W
hFE Gain
70

Quick Reference

The 2SA1213-Y(TE12L,ZC is a PNP bipolar junction transistor in a SOT-89 package, manufactured by TOSHIBA. It supports a breakdown voltage of 50V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)70Base signal amplification ratio
Transition Frequency (fT)120MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SA1213Y-2AF PNP SOT-89 50V 2A 70 500mW
2SA1213 PNP SOT-89 50V 2A 70 500mW
2SA1797(RANGE:180-390) PNP SOT-89 50V 2A 82 500mW
2DA1213Y-13 PNP SOT-89 50V 2A 120 1W
2SA1020G-Y-AB3-R PNP SOT-89 50V 2A 120 500mW
LBSS5250Y3T1G PNP SOT-89 50V 2A 180 550mW
2SA1797G-B-AB3-R PNP SOT-89 50V 2A 200 500mW
2SA2060(TE12L PNP SOT-89 50V 2A 200 1W
F PNP SOT-89 50V 2A 200 500mW
2SB1123T-TD-E PNP SOT-89 50V 2A 240 500mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS5250X-HXY PNP SOT-89 50V 2A 240 500mW
GOODWORK ๐Ÿ“„ PDF
2SA1213 PNP SOT-89 50V 2A 390 500mW
2SA1797-Q PNP SOT-89 50V 3A 80 2W
DPLS350Y-13 PNP SOT-89 50V 3A 82 900mW
2DA1797Q-13 PNP SOT-89 50V 3A - 550mW
GOODWORK ๐Ÿ“„ PDF
PBSS5350X-GK PNP SOT-89 50V 3A 200 550mW
LBSS5350SY3T1G PNP SOT-89 50V 3A 200 1.4W
Nexperia ๐Ÿ“„ PDF
PBSS5350X PNP SOT-89 50V 3A 200 1.6W
Nexperia ๐Ÿ“„ PDF
115 PNP SOT-89 50V 3A 400 500mW
PBSS5350X PNP SOT-89 50V 4A 200 3.5W