2DA1213Y-13 Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
50V
Ic Max
2A
Pd Max
1W
hFE Gain
120

Quick Reference

The 2DA1213Y-13 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 50V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)160MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SA1020G-Y-AB3-R PNP SOT-89 50V 2A 120 500mW
2SA1797(RANGE:180-390) PNP SOT-89 50V 2A 82 500mW
2SA1213-Y(TE12L PNP SOT-89 50V 2A 70 1W
ZC PNP SOT-89 50V 2A 70 500mW
2SA1213Y-2AF PNP SOT-89 50V 2A 70 500mW
2SA1213 PNP SOT-89 50V 2A 180 550mW
LBSS5250Y3T1G PNP SOT-89 50V 2A 200 500mW
2SA1797G-B-AB3-R PNP SOT-89 50V 2A 200 1W
2SA2060(TE12L PNP SOT-89 50V 2A 200 500mW
F PNP SOT-89 50V 2A 240 500mW
HXY MOSFET ๐Ÿ“„ PDF
2SB1123T-TD-E PNP SOT-89 50V 2A 240 500mW
GOODWORK ๐Ÿ“„ PDF
PBSS5250X-HXY PNP SOT-89 50V 2A 390 500mW
2SA1213 PNP SOT-89 50V 3A 82 900mW
2SA1797-Q PNP SOT-89 50V 3A 80 2W
2DA1797Q-13 PNP SOT-89 50V 3A 200 550mW
DPLS350Y-13 PNP SOT-89 50V 3A 200 1.4W
Nexperia ๐Ÿ“„ PDF
LBSS5350SY3T1G PNP SOT-89 50V 3A 200 1.6W
Nexperia ๐Ÿ“„ PDF
PBSS5350X PNP SOT-89 50V 3A - 550mW
GOODWORK ๐Ÿ“„ PDF
115 PNP SOT-89 50V 3A 400 500mW
PBSS5350X PNP SOT-89 50V 4A 200 3.5W