2DB1188R-13 Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
32V
Ic Max
2A
Pd Max
1W
hFE Gain
180

Quick Reference

The 2DB1188R-13 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 32V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)32VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)180Base signal amplification ratio
Transition Frequency (fT)120MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SB1188T100Q PNP SOT-89 32V 2A 120 500mW
2DB1188Q-13 PNP SOT-89 32V 2A 270 1W
2SB1188-Q-TP PNP SOT-89 32V 2A 390 500mW
FCX790ATA PNP SOT-89 40V 2A 150 2W
FCX1151ATA PNP SOT-89 40V 3A 180 2W
ZXTP25040DZTA PNP SOT-89 40V 3A 200 1.1W
DSS5540X-13 PNP SOT-89 40V 4A 150 900mW
LBSS5250Y3T1G PNP SOT-89 50V 2A 180 550mW
2SA1797G-B-AB3-R PNP SOT-89 50V 2A 200 500mW
2SA2060(TE12L PNP SOT-89 50V 2A 200 1W
F PNP SOT-89 50V 2A 200 500mW
2SB1123T-TD-E PNP SOT-89 50V 2A 120 1W
2DA1213Y-13 PNP SOT-89 50V 2A 120 500mW
2SA1020G-Y-AB3-R PNP SOT-89 50V 2A 240 500mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS5250X-HXY PNP SOT-89 50V 2A 240 500mW
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2SA1213 PNP SOT-89 50V 2A 82 500mW
2SA1797(RANGE:180-390) PNP SOT-89 50V 2A 70 1W
2SA1213-Y(TE12L PNP SOT-89 50V 2A 70 500mW
ZC PNP SOT-89 50V 2A 70 500mW
2SA1213Y-2AF PNP SOT-89 50V 2A 390 500mW