2DB1188Q-13 Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
32V
Ic Max
2A
Pd Max
1W
hFE Gain
270

Quick Reference

The 2DB1188Q-13 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 32V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)32VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)270Base signal amplification ratio
Transition Frequency (fT)120MHzMax operating frequency
Saturation Voltage (VCEsat)800mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2DB1188R-13 PNP SOT-89 32V 2A 180 1W
2SB1188-Q-TP PNP SOT-89 32V 2A 390 500mW
2SB1188T100Q PNP SOT-89 32V 2A 120 500mW
FCX790ATA PNP SOT-89 40V 2A 150 2W
ZXTP25040DZTA PNP SOT-89 40V 3A 200 1.1W
FCX1151ATA PNP SOT-89 40V 3A 180 2W
DSS5540X-13 PNP SOT-89 40V 4A 150 900mW
PBSS5250X-HXY PNP SOT-89 50V 2A 240 500mW
HXY MOSFET ๐Ÿ“„ PDF
2SA1213 PNP SOT-89 50V 2A 240 500mW
GOODWORK ๐Ÿ“„ PDF
2SA1797G-B-AB3-R PNP SOT-89 50V 2A 200 500mW
2SA2060(TE12L PNP SOT-89 50V 2A 200 1W
F PNP SOT-89 50V 2A 200 500mW
2SB1123T-TD-E PNP SOT-89 50V 2A 180 550mW
LBSS5250Y3T1G PNP SOT-89 50V 2A 390 500mW
2SA1797-Q PNP SOT-89 50V 2A 120 1W
2DA1213Y-13 PNP SOT-89 50V 2A 120 500mW
2SA1020G-Y-AB3-R PNP SOT-89 50V 2A 82 500mW
2SA1797(RANGE:180-390) PNP SOT-89 50V 2A 70 1W
2SA1213-Y(TE12L PNP SOT-89 50V 2A 70 500mW
ZC PNP SOT-89 50V 2A 70 500mW