2SD882 Transistor Datasheet & Specifications

NPN SOT-89 High Power LGE
VCEO
30V
Ic Max
3A
Pd Max
500mW
hFE Gain
230

Quick Reference

The 2SD882 is a NPN bipolar transistor in a SOT-89 package by LGE. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the 2SD882 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd500mWPower dissipation
DC Current Gain230hFE / Beta
Frequency140MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
PBSS4330X,115 NPN SOT-89 30V 3A 1.6W
PBSS4350X,115 NPN SOT-89 50V 3A 1.6W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
2SC5566-TD-E NPN SOT-89 50V 4A 3.5W
2SD882 NPN SOT-89 30V 3A 500mW
D882 NPN SOT-89 30V 3A 10W