2SC5707-TL-E Transistor Datasheet & Specifications
NPN
TO-252
High Power
onsemi
VCEO
50V
Ic Max
8A
Pd Max
1W
hFE Gain
200
Quick Reference
The 2SC5707-TL-E is a NPN bipolar transistor in a TO-252 package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 8A continuous collector current. Download the 2SC5707-TL-E datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 330MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD44H11T4G | NPN | TO-252 | 80V | 8A | 50W |
| MJD44H11 | NPN | TO-252 | 80V | 8A | 1.75W |
| MJD44H11T4G-DW | NPN | TO-252 | 80V | 8A | 20W |
| MJD41C(MS) | NPN | TO-252 | 100V | 9A | 1.25W |
| BTC1510F3L-TN3-R | NPN | TO-252 | 150V | 10A | 1.1W |
| MJD122 | NPN | TO-252 | 100V | 8A | 1.75W |