2SC3356-R25 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose JSMSEMI
VCEO
12V
Ic Max
100mA
Pd Max
200mW
hFE Gain
125

Quick Reference

The 2SC3356-R25 is a NPN bipolar transistor in a SOT-23 package by JSMSEMI. This datasheet provides complete specifications including 12V breakdown voltage and 100mA continuous collector current. Download the 2SC3356-R25 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO12VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain125hFE / Beta
Frequency7GHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
ZXTN25012EFLTA NPN SOT-23 12V 2A 350mW
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
MMBT3904-7-F NPN SOT-23 40V 200mA 310mW
MMBT5089 NPN SOT-23 25V 100mA 200mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW