2SB806 Transistor Datasheet & Specifications

PNP SOT-89 General Purpose Shikues
VCEO
120V
Ic Max
700mA
Pd Max
2W
hFE Gain
45

Quick Reference

The 2SB806 is a PNP bipolar transistor in a SOT-89 package by Shikues. This datasheet provides complete specifications including 120V breakdown voltage and 700mA continuous collector current. Download the 2SB806 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic700mACollector current
Pd2WPower dissipation
DC Current Gain45hFE / Beta
Frequency75MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2DA1201Y-7 PNP SOT-89 120V 800mA 1.5W
2SA1201Y PNP SOT-89 120V 800mA 500mW
2SA1013 PNP SOT-89 160V 1A 500mW
FCX555TA PNP SOT-89 150V 700mA 1.5W
2SA1013-Y PNP SOT-89 160V 1A 500mW
2SA1013-JSM PNP SOT-89 160V 1A 500mW
2SA1661-JSM PNP SOT-89 120V 800mA 500mW
2SA1201-JSM PNP SOT-89 120V 800mA 500mW
2SA1201 PNP SOT-89 120V 800mA 500mW
2SA1013 PNP SOT-89 160V 1A 500mW