2DA1201Y-7 Transistor Datasheet & Specifications

PNP SOT-89 General Purpose DIODES
VCEO
120V
Ic Max
800mA
Pd Max
1.5W
hFE Gain
120

Quick Reference

The 2DA1201Y-7 is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 120V breakdown voltage and 800mA continuous collector current. Download the 2DA1201Y-7 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic800mACollector current
Pd1.5WPower dissipation
DC Current Gain120hFE / Beta
Frequency160MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SA1201Y PNP SOT-89 120V 800mA 500mW
2SA1013 PNP SOT-89 160V 1A 500mW
2SA1013-Y PNP SOT-89 160V 1A 500mW
2SA1013-JSM PNP SOT-89 160V 1A 500mW
2SA1661-JSM PNP SOT-89 120V 800mA 500mW
2SA1201-JSM PNP SOT-89 120V 800mA 500mW
2SA1201 PNP SOT-89 120V 800mA 500mW
2SA1013 PNP SOT-89 160V 1A 500mW
2SA1661-Y PNP SOT-89 120V 800mA 1W
2SA1013-Y PNP SOT-89 160V 1A 500mW