2SA1013-Y Transistor Datasheet & Specifications

PNP SOT-89 General Purpose FUXINSEMI
VCEO
160V
Ic Max
1A
Pd Max
500mW
hFE Gain
320

Quick Reference

The 2SA1013-Y is a PNP bipolar transistor in a SOT-89 package by FUXINSEMI. This datasheet provides complete specifications including 160V breakdown voltage and 1A continuous collector current. Download the 2SA1013-Y datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFUXINSEMIOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic1ACollector current
Pd500mWPower dissipation
DC Current Gain320hFE / Beta
Frequency15MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SA1013 PNP SOT-89 160V 1A 500mW
2SA1013-Y PNP SOT-89 160V 1A 500mW
2SA1013-JSM PNP SOT-89 160V 1A 500mW
2SA1013 PNP SOT-89 160V 1A 500mW
2SA1013Y PNP SOT-89 160V 1A 500mW