2SA1201Y Transistor Datasheet & Specifications

PNP SOT-89 General Purpose Shikues
VCEO
120V
Ic Max
800mA
Pd Max
500mW
hFE Gain
80

Quick Reference

The 2SA1201Y is a PNP bipolar transistor in a SOT-89 package by Shikues. This datasheet provides complete specifications including 120V breakdown voltage and 800mA continuous collector current. Download the 2SA1201Y datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic800mACollector current
Pd500mWPower dissipation
DC Current Gain80hFE / Beta
Frequency120MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2DA1201Y-7 PNP SOT-89 120V 800mA 1.5W
2SA1013 PNP SOT-89 160V 1A 500mW
2SA1013-Y PNP SOT-89 160V 1A 500mW
2SA1013-JSM PNP SOT-89 160V 1A 500mW
2SA1661-JSM PNP SOT-89 120V 800mA 500mW
2SA1201-JSM PNP SOT-89 120V 800mA 500mW
2SA1201 PNP SOT-89 120V 800mA 500mW
2SA1013 PNP SOT-89 160V 1A 500mW
2SA1661-Y PNP SOT-89 120V 800mA 1W
2SA1013-Y PNP SOT-89 160V 1A 500mW