FCX555TA Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
DIODES
VCEO
150V
Ic Max
700mA
Pd Max
1.5W
hFE Gain
100
Quick Reference
The FCX555TA is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 150V breakdown voltage and 700mA continuous collector current. Download the FCX555TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 700mA | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 1nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |