2SB1561T100Q Transistor Datasheet & Specifications

PNP SOT-89 General Purpose ROHM
VCEO
60V
Ic Max
2A
Pd Max
2W
hFE Gain
120

Quick Reference

The 2SB1561T100Q is a PNP bipolar transistor in a SOT-89 package by ROHM. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the 2SB1561T100Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic2ACollector current
Pd2WPower dissipation
DC Current Gain120hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
2STF2360 PNP SOT-89 60V 3A 1.4W
PBSS4041PX,115 PNP SOT-89 60V 5A 2.5W
2SA1417-S PNP SOT-89 100V 2A 550mW
2SA2071T100Q PNP SOT-89 60V 3A 2W
PBSS304PX PNP SOT-89 60V 4.3A 2.1W
PBSS5480XZ PNP SOT-89 80V 4A 1.4W
LBTP560Y3T1G PNP SOT-89 60V 4.3A 550mW