2SB1260R Transistor Datasheet & Specifications

PNP SOT-89 General Purpose Shikues
VCEO
80V
Ic Max
1A
Pd Max
500mW
hFE Gain
390

Quick Reference

The 2SB1260R is a PNP bipolar transistor in a SOT-89 package by Shikues. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the 2SB1260R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd500mWPower dissipation
DC Current Gain390hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FCX593TA PNP SOT-89 100V 1A 2W
BCX53-16 PNP SOT-89 80V 1A 1W
BCX53-16 PNP SOT-89 80V 1A 1.3W
BCX53 AH HD PNP SOT-89 80V 1A 500mW
2SA1013 PNP SOT-89 160V 1A 500mW
H2SB1260T100R PNP SOT-89 80V 1A 500mW
2SB1260T100Q PNP SOT-89 80V 1A 1W
BCX53-16 PNP SOT-89 80V 1A 500mW
2SA1416S-TD-E PNP SOT-89 100V 1A 500mW
BCX53TA PNP SOT-89 80V 1A 1.5W