2SA1416S-TD-E Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
onsemi
VCEO
100V
Ic Max
1A
Pd Max
500mW
hFE Gain
100
Quick Reference
The 2SA1416S-TD-E is a PNP bipolar transistor in a SOT-89 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the 2SA1416S-TD-E datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 100mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| FCX593TA | PNP | SOT-89 | 100V | 1A | 2W |
| 2SA1013 | PNP | SOT-89 | 160V | 1A | 500mW |
| 2SA1417-S | PNP | SOT-89 | 100V | 2A | 550mW |
| 2SA1013-Y | PNP | SOT-89 | 160V | 1A | 500mW |
| 2SA1013-JSM | PNP | SOT-89 | 160V | 1A | 500mW |
| 2SA1013 | PNP | SOT-89 | 160V | 1A | 500mW |
| 2SA1013-Y | PNP | SOT-89 | 160V | 1A | 500mW |
| BCX53-16-AU_R1_000A1 | PNP | SOT-89 | 100V | 1A | 1.4W |
| 2SA1013Y | PNP | SOT-89 | 160V | 1A | 500mW |