2SB1260T100Q Transistor Datasheet & Specifications

PNP SOT-89 General Purpose ROHM
VCEO
80V
Ic Max
1A
Pd Max
1W
hFE Gain
120

Quick Reference

The 2SB1260T100Q is a PNP bipolar transistor in a SOT-89 package by ROHM. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the 2SB1260T100Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd1WPower dissipation
DC Current Gain120hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FCX593TA PNP SOT-89 100V 1A 2W
BCX53-16 PNP SOT-89 80V 1A 1W
BCX53-16 PNP SOT-89 80V 1A 1.3W
BCX53 AH HD PNP SOT-89 80V 1A 500mW
2SA1013 PNP SOT-89 160V 1A 500mW
H2SB1260T100R PNP SOT-89 80V 1A 500mW
BCX53-16 PNP SOT-89 80V 1A 500mW
2SA1416S-TD-E PNP SOT-89 100V 1A 500mW
BCX53TA PNP SOT-89 80V 1A 1.5W
2SA1417-S PNP SOT-89 100V 2A 550mW