H2SB1260T100R Transistor Datasheet & Specifications
PNP
SOT-89
General Purpose
HXY MOSFET
VCEO
80V
Ic Max
1A
Pd Max
500mW
hFE Gain
390
Quick Reference
The H2SB1260T100R is a PNP bipolar transistor in a SOT-89 package by HXY MOSFET. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the H2SB1260T100R datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 390 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| FCX593TA | PNP | SOT-89 | 100V | 1A | 2W |
| BCX53-16 | PNP | SOT-89 | 80V | 1A | 1W |
| BCX53-16 | PNP | SOT-89 | 80V | 1A | 1.3W |
| BCX53 AH HD | PNP | SOT-89 | 80V | 1A | 500mW |
| 2SA1013 | PNP | SOT-89 | 160V | 1A | 500mW |
| 2SB1260T100Q | PNP | SOT-89 | 80V | 1A | 1W |
| BCX53-16 | PNP | SOT-89 | 80V | 1A | 500mW |
| 2SA1416S-TD-E | PNP | SOT-89 | 100V | 1A | 500mW |
| BCX53TA | PNP | SOT-89 | 80V | 1A | 1.5W |
| 2SA1417-S | PNP | SOT-89 | 100V | 2A | 550mW |