2SB1132 Transistor Datasheet & Specifications

PNP SOT-89 General Purpose HT(Shenzhen Jinyu Semicon)
VCEO
32V
Ic Max
1A
Pd Max
500mW
hFE Gain
390

Quick Reference

The 2SB1132 is a PNP bipolar transistor in a SOT-89 package by HT(Shenzhen Jinyu Semicon). This datasheet provides complete specifications including 32V breakdown voltage and 1A continuous collector current. Download the 2SB1132 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO32VBreakdown voltage
Ic1ACollector current
Pd500mWPower dissipation
DC Current Gain390hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
2DB1132R-13 PNP SOT-89 32V 1A 1.5W
FCX591ATA PNP SOT-89 40V 1A 1W
BCX51,115 PNP SOT-89 45V 1A 1.35W
BCX51-16,115 PNP SOT-89 45V 1A 1.35W
2STF2360 PNP SOT-89 60V 3A 1.4W
FCX593TA PNP SOT-89 100V 1A 2W
ZX5T3ZTA PNP SOT-89 40V 5.5A 3W
FCX1151ATA PNP SOT-89 40V 3A 2W
DPLS350Y-13 PNP SOT-89 50V 3A 2W