2DB1132R-13 Transistor Datasheet & Specifications

PNP SOT-89 General Purpose DIODES
VCEO
32V
Ic Max
1A
Pd Max
1.5W
hFE Gain
180

Quick Reference

The 2DB1132R-13 is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 32V breakdown voltage and 1A continuous collector current. Download the 2DB1132R-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO32VBreakdown voltage
Ic1ACollector current
Pd1.5WPower dissipation
DC Current Gain180hFE / Beta
Frequency190MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
FCX591ATA PNP SOT-89 40V 1A 1W
BCX51,115 PNP SOT-89 45V 1A 1.35W
BCX51-16,115 PNP SOT-89 45V 1A 1.35W
2STF2360 PNP SOT-89 60V 3A 1.4W
FCX593TA PNP SOT-89 100V 1A 2W
ZX5T3ZTA PNP SOT-89 40V 5.5A 3W
FCX1151ATA PNP SOT-89 40V 3A 2W
DPLS350Y-13 PNP SOT-89 50V 3A 2W
PBSS5350X,115 PNP SOT-89 50V 3A 1.4W