2N5886 Transistor Datasheet & Specifications
NPN
TO-3
High Power
SPTECH
VCEO
80V
Ic Max
25A
Pd Max
200W
hFE Gain
100
Quick Reference
The 2N5886 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 80V breakdown voltage and 25A continuous collector current. Download the 2N5886 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 25A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 4V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 500uA | Leakage (ICBO) |
| Temp | - | Operating temp |