MJ11030 Transistor Datasheet & Specifications
NPN
TO-3
High Power
SPTECH
VCEO
90V
Ic Max
50A
Pd Max
300W
hFE Gain
18000
Quick Reference
The MJ11030 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 90V breakdown voltage and 50A continuous collector current. Download the MJ11030 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 90V | Breakdown voltage |
| Ic | 50A | Collector current |
| Pd | 300W | Power dissipation |
| DC Current Gain | 18000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 3.5V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 5mA | Leakage (ICBO) |
| Temp | -55℃~+200℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJ11032 | NPN | TO-3 | 120V | 50A | 300W |