2N5686 Transistor Datasheet & Specifications

NPN TO-3 High Power SPTECH
VCEO
80V
Ic Max
2mA
Pd Max
300W
hFE Gain
60

Quick Reference

The 2N5686 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 80V breakdown voltage and 2mA continuous collector current. Download the 2N5686 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic2mACollector current
Pd300WPower dissipation
DC Current Gain60hFE / Beta
Frequency2MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJ15015G NPN TO-3 120V 15A 180W
MJ15024 NPN TO-3 250V 16A 250W
BDY58 NPN TO-3 125V 25A 175W
2N5631 NPN TO-3 140V 16A 200W
BD317 NPN TO-3 100V 16A 200W
MJ15026 NPN TO-3 200V 16A 250W
2SD750 NPN TO-3 80V 15A 100W
2SC1116 NPN TO-3 120V 10A 100W
2SD424 NPN TO-3 180V 15A 150W
2SC3058 NPN TO-3 400V 30A 200W