2N5401S-RTK/P Transistor Datasheet & Specifications

PNP SOT-23 General Purpose KEC
VCEO
150V
Ic Max
600mA
Pd Max
350mW
hFE Gain
60

Quick Reference

The 2N5401S-RTK/P is a PNP bipolar transistor in a SOT-23 package by KEC. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the 2N5401S-RTK/P datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerKECOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO150VBreakdown voltage
Ic600mACollector current
Pd350mWPower dissipation
DC Current Gain60hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT5401-7-F PNP SOT-23 150V 600mA 310mW
MMBT5401(RANGE:200-300) PNP SOT-23 150V 600mA 300mW
MMBT5401-TP PNP SOT-23 150V 600mA 300mW
MMBT5401 PNP SOT-23 160V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT5401S PNP SOT-23 150V 600mA 300mW
PBHV9115T,215 PNP SOT-23 150V 1A 300mW
MMBT5401(RANGE:100-200) PNP SOT-23 150V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW