2N3055 Transistor Datasheet & Specifications
NPN
TO-3
High Power
JSMSEMI
VCEO
60V
Ic Max
15A
Pd Max
115W
hFE Gain
5
Quick Reference
The 2N3055 is a NPN bipolar transistor in a TO-3 package by JSMSEMI. This datasheet provides complete specifications including 60V breakdown voltage and 15A continuous collector current. Download the 2N3055 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 115W | Power dissipation |
| DC Current Gain | 5 | hFE / Beta |
| Frequency | 2.5MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 700uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJ15015G | NPN | TO-3 | 120V | 15A | 180W |
| MJ15024 | NPN | TO-3 | 250V | 16A | 250W |
| 2N3772 | NPN | TO-3 | 60V | 20A | 150W |
| BDY58 | NPN | TO-3 | 125V | 25A | 175W |
| 2N5631 | NPN | TO-3 | 140V | 16A | 200W |
| BD317 | NPN | TO-3 | 100V | 16A | 200W |
| 2N5302 | NPN | TO-3 | 60V | 30A | 200W |
| MJ15026 | NPN | TO-3 | 200V | 16A | 250W |
| 2N5685 | NPN | TO-3 | 60V | 50A | 300W |
| 2N3055A | NPN | TO-3 | 60V | 15A | 115W |