ZXTN5551GTA Transistor Datasheet & Specifications

NPN BJT | DIODES

NPNSOT-223General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
2W
Gain
80
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Quick Reference

The ZXTN5551GTA is a NPN bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the ZXTN5551GTA datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max2WPower dissipation
Gain80DC current gain
Frequency65MHzTransition speed
VCEsat150mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
FZT855TANPNSOT-223150V5A3W
CZT5551 TRNPNSOT-223160V600mA2W
CZT5551NPNSOT-223-160V-
PZT5551-TPNPNSOT-223160V600mA1W
DZT5551Q-13NPNSOT-223160V600mA2W
CZT5551-JSMNPNSOT-223160V600mA2W
FZT694BTANPNSOT-223120V1A1.6W
CZT5551NPNSOT-223-160V-
PZT5551G-B-AA3-RNPNSOT-223160V690mA2W
DZT5551-13NPNSOT-223160V600mA2W
View all SOT-223 NPN Transistors ›