PZT5551-TP Transistor Datasheet & Specifications

NPN BJT | MCC

NPNSOT-223General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
1W
Gain
250
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Quick Reference

The PZT5551-TP is a NPN bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the PZT5551-TP datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMCCOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max1WPower dissipation
Gain250DC current gain
Frequency300MHzTransition speed
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
FZT855TANPNSOT-223150V5A3W
CZT5551 TRNPNSOT-223160V600mA2W
ZXTN5551GTANPNSOT-223160V600mA2W
CZT5551NPNSOT-223-160V-
DZT5551Q-13NPNSOT-223160V600mA2W
CZT5551-JSMNPNSOT-223160V600mA2W
FZT694BTANPNSOT-223120V1A1.6W
CZT5551NPNSOT-223-160V-
PZT5551G-B-AA3-RNPNSOT-223160V690mA2W
DZT5551-13NPNSOT-223160V600mA2W
View all SOT-223 NPN Transistors ›