PZT5551G-B-AA3-R Transistor Datasheet & Specifications

NPN BJT | UTC

NPNSOT-223General Purpose
VCEO
160V
Ic Max
690mA
Pd Max
2W
Gain
400

Quick Reference

The PZT5551G-B-AA3-R is a NPN bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including 160V breakdown voltage and 690mA continuous collector current. Download the PZT5551G-B-AA3-R datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO160VBreakdown voltage
IC Max690mACollector current
Pd Max2WPower dissipation
Gain400DC current gain
Frequency300MHzTransition speed
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
FZT855TANPNSOT-223150V5A3W
CZT5551 TRNPNSOT-223160V600mA2W
ZXTN5551GTANPNSOT-223160V600mA2W
CZT5551NPNSOT-223-160V-
PZT5551-TPNPNSOT-223160V600mA1W
DZT5551Q-13NPNSOT-223160V600mA2W
CZT5551-JSMNPNSOT-223160V600mA2W
FZT694BTANPNSOT-223120V1A1.6W
CZT5551NPNSOT-223-160V-
DZT5551-13NPNSOT-223160V600mA2W