YFW8N65AD MOSFET Datasheet & Specifications

N-Channel TO-252 High-Voltage YFW
Vds Max
650V
Id Max
8A
Rds(on)
1.15Ω@10V
Vgs(th)
4V

Quick Reference

The YFW8N65AD is an N-Channel MOSFET in a TO-252 package, manufactured by YFW. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)8AMax current handling
Power Dissipation (Pd)100WMax thermal limit
On-Resistance (Rds(on))1.15Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)7.9nC@10VSwitching energy
Input Capacitance (Ciss)1.1nFInternal gate capacitance
Output Capacitance (Coss)45pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

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H15N65D N-Channel TO-252 650V 15A 220mΩ@10V 3.5V
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HCD65R280-S2 N-Channel TO-252 650V 15A 240mΩ@10V 4.5V
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NCE65T260K N-Channel TO-252 650V 15A 260mΩ@10V 4V
APC65R300KM N-Channel TO-252 650V 15A 300mΩ@10V 4V
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MLS65R380D N-Channel TO-252 650V 11A 330mΩ@10V 4V
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RS65R380BD N-Channel TO-252 650V 10.6A 340mΩ@10V 4V
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DOD12N65S N-Channel TO-252 650V 12A 380mΩ@10V 4V
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HCD65R360 N-Channel TO-252 650V 11A 400mΩ@10V 4V
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NCE65T540K N-Channel TO-252 650V 8A 540mΩ@10V 4V
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ASD80R750E N-Channel TO-252 800V 8.5A 750mΩ@10V 4.2V