HCD65R360 MOSFET Datasheet & Specifications
N-Channel
TO-252
High-Voltage
HUAKE
Vds Max
650V
Id Max
11A
Rds(on)
400mΩ@10V
Vgs(th)
4V
Quick Reference
The HCD65R360 is an N-Channel MOSFET in a TO-252 package, manufactured by HUAKE. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 11A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAKE | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 11A | Max current handling |
| Power Dissipation (Pd) | 91W | Max thermal limit |
| On-Resistance (Rds(on)) | 400mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 23.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 615pF | Internal gate capacitance |
| Output Capacitance (Coss) | 270pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| H15N65D | N-Channel | TO-252 | 650V | 15A | 220mΩ@10V | 3.5V | Huixin 📄 PDF |
| RS65R280BD | N-Channel | TO-252 | 650V | 13.8A | 240mΩ@10V | 4V | REASUNOS 📄 PDF |
| HCD65R280-S2 | N-Channel | TO-252 | 650V | 15A | 240mΩ@10V | 4.5V | HUAKE 📄 PDF |
| NCE65T260K | N-Channel | TO-252 | 650V | 15A | 260mΩ@10V | 4V | NCE 📄 PDF |
| APC65R300KM | N-Channel | TO-252 | 650V | 15A | 300mΩ@10V | 4V | ALLPOWER 📄 PDF |
| MLS65R380D | N-Channel | TO-252 | 650V | 11A | 330mΩ@10V | 4V | Minos 📄 PDF |
| DOD12N65S | N-Channel | TO-252 | 650V | 12A | 380mΩ@10V | 4V | DOINGTER 📄 PDF |
| H11N70D | N-Channel | TO-252 | 700V | 11A | 330mΩ@10V | 3V | Huixin 📄 PDF |