ASD80R750E MOSFET Datasheet & Specifications
N-Channel
TO-252
High-Voltage
ANHI
Vds Max
800V
Id Max
8.5A
Rds(on)
750mΩ@10V
Vgs(th)
4.2V
Quick Reference
The ASD80R750E is an N-Channel MOSFET in a TO-252 package, manufactured by ANHI. It supports a drain-source breakdown voltage of 800V and a continuous drain current of 8.5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ANHI | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 800V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8.5A | Max current handling |
| Power Dissipation (Pd) | 150W | Max thermal limit |
| On-Resistance (Rds(on)) | 750mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.2V | Voltage required to turn on |
| Gate Charge (Qg) | 18.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 850.8pF | Internal gate capacitance |
| Output Capacitance (Coss) | 34.4pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||