TX40N06B MOSFET Datasheet & Specifications
N-Channel
TO-252
Logic-Level
XDS
Vds Max
60V
Id Max
35A
Rds(on)
25mΩ@10V
Vgs(th)
2V
Quick Reference
The TX40N06B is an N-Channel MOSFET in a TO-252 package, manufactured by XDS. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 35A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XDS | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 35A | Max current handling |
| Power Dissipation (Pd) | 3.75W | Max thermal limit |
| On-Resistance (Rds(on)) | 25mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 81.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 6.201nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.725nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DOD130N06 | N-Channel | TO-252 | 60V | 130A | 3.5mΩ@10V | 2.5V | DOINGTER 📄 PDF |
| HB06N047SG | N-Channel | TO-252 | 60V | 110A | 3.7mΩ@10V | 1.7V | R+O 📄 PDF |
| AOD2606-MS | N-Channel | TO-252 | 60V | 80A | 6mΩ@10V | 1.4V | MSKSEMI 📄 PDF |
| DOD80N06 | N-Channel | TO-252 | 60V | 80A | 6.5mΩ@10V | 2.5V | DOINGTER 📄 PDF |
| YJD80G06CQ | N-Channel | TO-252 | 60V | 80A | 7.5mΩ@10V | 2.5V | YANGJIE 📄 PDF |
| 50N06 | N-Channel | TO-252 | 60V | 50A | 8.6mΩ@10V | 2.5V | HL 📄 PDF |
| AOD2610E | N-Channel | TO-252 | 60V | 46A | 9.5mΩ@10V | 2.4V | AOS 📄 PDF |
| 50N06-TD | N-Channel | TO-252 | 60V | 50A | 10mΩ@10V 12mΩ@4.5V |
2.5V | TDSEMIC 📄 PDF |
| FQD50N06-VB | N-Channel | TO-252 | 60V | 56A | 10mΩ@10V 13mΩ@4.5V |
2V | VBsemi Elec 📄 PDF |
| STD30NF06LT4 | N-Channel | TO-252 | 60V | 50A | 14mΩ@10V | 1.9V | TECH PUBLIC 📄 PDF |
| SQD40N06-14L_GE3 | N-Channel | TO-252 | 60V | 40A | 17mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| IRFR1205TR-JSM | N-Channel | TO-252 | 60V | 50A | 17mΩ@10V | 2.5V | JSMSEMI 📄 PDF |
| BCD50N06 | N-Channel | TO-252 | 60V | 50A | 17mΩ@10V | 2.5V | baocheng 📄 PDF |
| TX50N06 | N-Channel | TO-252 | 60V | 50A | 20mΩ@10V | 2.5V | XDS 📄 PDF |
| 50N06 | N-Channel | TO-252 | 60V | 50A | 21mΩ@10V | 2.2V | KUU 📄 PDF |
| WSF40N06 | N-Channel | TO-252 | 60V | 50A | 23mΩ@10V | 2.5V | Winsok Semicon 📄 PDF |
| AOD4130-VB | N-Channel | TO-252 | 60V | 45A | 25mΩ@10V | 2V | VBsemi Elec 📄 PDF |
| SP010N04BGTH | N-Channel | TO-252 | 100V | 120A | 5mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| MDDG10R08D | N-Channel | TO-252 | 100V | 75A | 6.5mΩ@10V | 2V | MDD(Microdiod... 📄 PDF |
| HB10N085SG | N-Channel | TO-252 | 100V | 80A | 6.7mΩ@10V | 1.7V | R+O 📄 PDF |