TSK60N50M MOSFET Datasheet & Specifications
N-Channel
TO-247
High-Voltage
Truesemi
Vds Max
500V
Id Max
60A
Rds(on)
88mΩ@10V
Vgs(th)
4V
Quick Reference
The TSK60N50M is an N-Channel MOSFET in a TO-247 package, manufactured by Truesemi. It supports a drain-source breakdown voltage of 500V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Truesemi | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 500V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 1kW | Max thermal limit |
| On-Resistance (Rds(on)) | 88mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 193nC@10V | Switching energy |
| Input Capacitance (Ciss) | 9.592nF | Internal gate capacitance |
| Output Capacitance (Coss) | 728pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| GBS60037TOB | N-Channel | TO-247 | 600V | 60A | 34mΩ@10V | 4V | GOSEMICON 📄 PDF |
| MMQ60R044RFTH | N-Channel | TO-247 | 600V | 60A | 38mΩ@10V | 4V | MagnaChip Sem... 📄 PDF |
| GBS65041TOB | N-Channel | TO-247 | 650V | 66A | 34mΩ@10V | 4V | GOSEMICON 📄 PDF |