TPMMDT5551 Transistor Datasheet & Specifications
NPN+PNPSOT-363General Purpose
VCEO
160V
Ic Max
200mA
Pd Max
200mW
Gain
80
Quick Reference
The TPMMDT5551 is a NPN+PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the TPMMDT5551 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| VCEO | 160V | Breakdown voltage |
| IC Max | 200mA | Collector current |
| Pd Max | 200mW | Power dissipation |
| Gain | 80 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |