MMBT5451DW Transistor Datasheet & Specifications
NPN+PNPSOT-363General Purpose
VCEO
160V
Ic Max
200mA
Pd Max
200mW
Gain
300
Quick Reference
The MMBT5451DW is a NPN+PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the MMBT5451DW datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YFW | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| VCEO | 160V | Breakdown voltage |
| IC Max | 200mA | Collector current |
| Pd Max | 200mW | Power dissipation |
| Gain | 300 | DC current gain |
| Frequency | 300MHz | Transition speed |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | - | Operating temp |