MMDT5401G Transistor Datasheet & Specifications

NPN+PNP BJT | LGE

NPN+PNPSOT-363General Purpose
VCEO
150V
Ic Max
200mA
Pd Max
200mW
Gain
60
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Quick Reference

The MMDT5401G is a NPN+PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 150V breakdown voltage and 200mA continuous collector current. Download the MMDT5401G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO150VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain60DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT5451NPN+PNPSOT-363160V200mA200mW
TPMMDT5551NPN+PNPSOT-363160V200mA200mW
MMDT5451NPN+PNPSOT-363160V200mA200mW
MMDT5451NPN+PNPSOT-363160V200mA200mW
MMBT5451DWNPN+PNPSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
View all SOT-363 NPN+PNP Transistors ›