TPMMDT5401 Transistor Datasheet & Specifications

PNP BJT | TECH PUBLIC

PNPSOT-363General Purpose
VCEO
150V
Ic Max
200mA
Pd Max
200mW
Gain
50

Quick Reference

The TPMMDT5401 is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 150V breakdown voltage and 200mA continuous collector current. Download the TPMMDT5401 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO150VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain50DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT5401PNPSOT-363-150V600mA
MMDT5401DWPNPSOT-363150V600mA300mW
MMDT5401PNPSOT-363-150V600mA
MMDT5401PNPSOT-363-150V600mA
MMDT5401PNPSOT-363-150V600mA
MMDT5401(RANGE:100-300)PNPSOT-363150V200mA200mW