MMDT5401DW Transistor Datasheet & Specifications

PNP BJT | CBI

PNPSOT-363General Purpose
VCEO
150V
Ic Max
600mA
Pd Max
300mW
Gain
300

Quick Reference

The MMDT5401DW is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the MMDT5401DW datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerCBIOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO150VBreakdown voltage
IC Max600mACollector current
Pd Max300mWPower dissipation
Gain300DC current gain
Frequency100MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT5401PNPSOT-363-150V600mA
TPMMDT5401PNPSOT-363150V200mA200mW
MMDT5401PNPSOT-363-150V600mA
MMDT5401PNPSOT-363-150V600mA
MMDT5401PNPSOT-363-150V600mA
MMDT5401(RANGE:100-300)PNPSOT-363150V200mA200mW