MMDT5401(RANGE:100-300) Transistor Datasheet & Specifications

PNP BJT | JSCJ

PNPSOT-363General Purpose
VCEO
150V
Ic Max
200mA
Pd Max
200mW
Gain
50
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Quick Reference

The MMDT5401(RANGE:100-300) is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 150V breakdown voltage and 200mA continuous collector current. Download the MMDT5401(RANGE:100-300) datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO150VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain50DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT5401PNPSOT-363-150V600mA
TPMMDT5401PNPSOT-363150V200mA200mW
MMDT5401DWPNPSOT-363150V600mA300mW
MMDT5401PNPSOT-363-150V600mA
MMDT5401PNPSOT-363-150V600mA
MMDT5401PNPSOT-363-150V600mA
View all SOT-363 PNP Transistors ›