TK5A50D(STA4,X,M) MOSFET Datasheet & Specifications

N-Channel TO-220SIS High-Voltage TOSHIBA
Vds Max
500V
Id Max
5A
Rds(on)
1.5ฮฉ@10V
Vgs(th)
4.4V

Quick Reference

The TK5A50D(STA4,X,M) is an N-Channel MOSFET in a TO-220SIS package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 500V and a continuous drain current of 5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-220SISPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)500VMax breakdown voltage
Continuous Drain Current (Id)5AMax current handling
Power Dissipation (Pd)35WMax thermal limit
On-Resistance (Rds(on))1.5ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.4VVoltage required to turn on
Gate Charge (Qg)11nC@10VSwitching energy
Input Capacitance (Ciss)490pFInternal gate capacitance
Output Capacitance (Coss)55pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TK12A50W N-Channel TO-220SIS 500V 11.5A 265mฮฉ@10V 3.7V
S5X(M N-Channel TO-220SIS 600V 30.8A 88mฮฉ@10V 3.7V
TK31A60W N-Channel TO-220SIS 600V 20A 175mฮฉ@10V 4.5V
S4VX N-Channel TO-220SIS 600V 15.8A 190mฮฉ@10V 3.7V
TK20A60W5 N-Channel TO-220SIS 600V 10A 620mฮฉ@10V 2V
S5VX N-Channel TO-220SIS 650V 7A 430mฮฉ@10V 4V
TK16A60W N-Channel TO-220SIS 800V 17A 290mฮฉ@10V 4V
S4VX N-Channel TO-220SIS 800V 10A 700mฮฉ@10V 2.5V;4V
TK750A60F N-Channel TO-220SIS 800V 6A 1.7ฮฉ@10V 4V
S4X(S N-Channel TO-220SIS 800V 5A 1.9ฮฉ@10V 2.5V;4V
TK560A65Y N-Channel TO-220SIS 900V 7A 1.6ฮฉ@10V 2.5V