TK560A65Y,S4X(S MOSFET Datasheet & Specifications
N-Channel
TO-220SIS
High-Voltage
TOSHIBA
Vds Max
650V
Id Max
7A
Rds(on)
430mΩ@10V
Vgs(th)
4V
Quick Reference
The TK560A65Y,S4X(S is an N-Channel MOSFET in a TO-220SIS package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 7A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-220SIS | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7A | Max current handling |
| Power Dissipation (Pd) | 30W | Max thermal limit |
| On-Resistance (Rds(on)) | 430mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 14.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 380pF | Internal gate capacitance |
| Output Capacitance (Coss) | 18pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |