TK10A80E,S4X(S MOSFET Datasheet & Specifications
N-Channel
TO-220SIS
Logic-Level
TOSHIBA
Vds Max
800V
Id Max
10A
Rds(on)
700mΩ@10V
Vgs(th)
2.5V;4V
Quick Reference
The TK10A80E,S4X(S is an N-Channel MOSFET in a TO-220SIS package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 800V and a continuous drain current of 10A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-220SIS | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 800V | Max breakdown voltage |
| Continuous Drain Current (Id) | 10A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| On-Resistance (Rds(on)) | 700mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V;4V | Voltage required to turn on |
| Gate Charge (Qg) | 46nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 150pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||