STP100N8F6 MOSFET Datasheet & Specifications

N-Channel TO-220 High-Current ST
Vds Max
80V
Id Max
100A
Rds(on)
9mΩ@10V
Vgs(th)
4V

Quick Reference

The STP100N8F6 is an N-Channel MOSFET in a TO-220 package, manufactured by ST. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 100A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)80VMax breakdown voltage
Continuous Drain Current (Id)100AMax current handling
Power Dissipation (Pd)176WMax thermal limit
On-Resistance (Rds(on))9mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)100nC@10VSwitching energy
Input Capacitance (Ciss)5.955nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CSD19505KCS N-Channel TO-220 80V 208A 2.6mΩ@10V 2.6V
TK100E08N1 N-Channel TO-220 80V 214A 3.2mΩ@10V 4V
TOSHIBA 📄 PDF
S1X(S N-Channel TO-220 80V 211A 3.3mΩ@10V 4.5V
onsemi 📄 PDF
FDP032N08B-F102 N-Channel TO-220 80V 110A 6.5mΩ@10V 4.5V
STP110N8F6 N-Channel TO-220 100V 180A 2.3mΩ@10V 3V
CRMICRO 📄 PDF
CRST030N10N N-Channel TO-220 100V 200A 2.6mΩ@10V 4V
NCEP026N10 N-Channel TO-220 100V 260A 2.6mΩ@10V 3V
SCILICON 📄 PDF
SFP032N100C3 N-Channel TO-220 100V 207A 3.4mΩ@10V 4V
TOSHIBA 📄 PDF
TK100E10N1 N-Channel TO-220 100V 180A 4.5mΩ@10V 4V
Infineon 📄 PDF
S1X(S N-Channel TO-220 100V 160A 6.7mΩ@10V 3.6V
CRMICRO 📄 PDF
IRFB4110PBF N-Channel TO-220 150V 120A 6.2mΩ@10V 4.1V
SCILICON 📄 PDF
CRTT067N10N N-Channel TO-220 150V 130A 7.5mΩ@10V 4V
onsemi 📄 PDF