FDP032N08B-F102 MOSFET Datasheet & Specifications
N-Channel
TO-220
High-Current
onsemi
Vds Max
80V
Id Max
211A
Rds(on)
3.3mΩ@10V
Vgs(th)
4.5V
Quick Reference
The FDP032N08B-F102 is an N-Channel MOSFET in a TO-220 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 211A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 211A | Max current handling |
| Power Dissipation (Pd) | 263W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.3mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TK100E08N1 | N-Channel | TO-220 | 80V | 214A | 3.2mΩ@10V | 4V | TOSHIBA 📄 PDF |
| S1X(S | N-Channel | TO-220 | 100V | 260A | 2.6mΩ@10V | 3V | SCILICON 📄 PDF |