STD3NK60ZT4 MOSFET Datasheet & Specifications

N-Channel TO-252(DPAK) High-Voltage ST
Vds Max
600V
Id Max
2.4A
Rds(on)
3.6ฮฉ@10V
Vgs(th)
4.5V

Quick Reference

The STD3NK60ZT4 is an N-Channel MOSFET in a TO-252(DPAK) package, manufactured by ST. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 2.4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)2.4AMax current handling
Power Dissipation (Pd)45WMax thermal limit
On-Resistance (Rds(on))3.6ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.5VVoltage required to turn on
Gate Charge (Qg)11.8nC@10VSwitching energy
Input Capacitance (Ciss)311pFInternal gate capacitance
Output Capacitance (Coss)43pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
MMD60R400RFZRH N-Channel TO-252(DPAK) 600V 11A 360mฮฉ@10V 4V
MagnaChip Sem... ๐Ÿ“„ PDF
STD13NM60N N-Channel TO-252(DPAK) 600V 11A 360mฮฉ@10V 4V
STD13N60DM2 N-Channel TO-252(DPAK) 600V 11A 365mฮฉ@10V 5V
FCD380N60E N-Channel TO-252(DPAK) 600V 10.2A 380mฮฉ@10V 3.5V
STD10NM60N N-Channel TO-252(DPAK) 600V 10A 550mฮฉ@10V 4V
STD7NM60N N-Channel TO-252(DPAK) 600V 5A 900mฮฉ@10V 4V
STD7N60M2 N-Channel TO-252(DPAK) 600V 5A 950mฮฉ@10V 4V
FDD5N60NZTM N-Channel TO-252(DPAK) 600V 4A 2ฮฉ@10V 5V
TK290P65Y N-Channel TO-252(DPAK) 650V 11.5A 290mฮฉ@10V 4V
RQ N-Channel TO-252(DPAK) 900V 3A 4.8ฮฉ@10V 4.5V
STD3NK90ZT4 N-Channel TO-252(DPAK) 1kV 2.5A 6ฮฉ@10V 4.5V