FDD5N60NZTM MOSFET Datasheet & Specifications

N-Channel TO-252(DPAK) High-Voltage onsemi
Vds Max
600V
Id Max
4A
Rds(on)
2Ī©@10V
Vgs(th)
5V

Quick Reference

The FDD5N60NZTM is an N-Channel MOSFET in a TO-252(DPAK) package, manufactured by onsemi. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)4AMax current handling
Power Dissipation (Pd)83WMax thermal limit
On-Resistance (Rds(on))2Ī©@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)13nC@10VSwitching energy
Input Capacitance (Ciss)600pFInternal gate capacitance
Output Capacitance (Coss)65pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
MMD60R400RFZRH N-Channel TO-252(DPAK) 600V 11A 360mΩ@10V 4V
MagnaChip Sem... šŸ“„ PDF
STD13NM60N N-Channel TO-252(DPAK) 600V 11A 360mΩ@10V 4V
STD13N60DM2 N-Channel TO-252(DPAK) 600V 11A 365mΩ@10V 5V
FCD380N60E N-Channel TO-252(DPAK) 600V 10.2A 380mΩ@10V 3.5V
STD10NM60N N-Channel TO-252(DPAK) 600V 10A 550mΩ@10V 4V
STD7NM60N N-Channel TO-252(DPAK) 600V 5A 900mΩ@10V 4V
STD7N60M2 N-Channel TO-252(DPAK) 600V 5A 950mΩ@10V 4V
TK290P65Y N-Channel TO-252(DPAK) 650V 11.5A 290mΩ@10V 4V
TOSHIBA šŸ“„ PDF