STD3NK90ZT4 MOSFET Datasheet & Specifications

N-Channel TO-252(DPAK) High-Voltage ST
Vds Max
900V
Id Max
3A
Rds(on)
4.8Ω@10V
Vgs(th)
4.5V

Quick Reference

The STD3NK90ZT4 is an N-Channel MOSFET in a TO-252(DPAK) package, manufactured by ST. It supports a drain-source breakdown voltage of 900V and a continuous drain current of 3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)900VMax breakdown voltage
Continuous Drain Current (Id)3AMax current handling
Power Dissipation (Pd)90WMax thermal limit
On-Resistance (Rds(on))4.8Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.5VVoltage required to turn on
Gate Charge (Qg)22.7nC@10VSwitching energy
Input Capacitance (Ciss)590pFInternal gate capacitance
Output Capacitance (Coss)63pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.