STD1NK60T4 MOSFET Datasheet & Specifications
N-Channel
DPAK
High-Voltage
ST
Vds Max
600V
Id Max
1A
Rds(on)
8.5ฮฉ@10V
Vgs(th)
3.7V
Quick Reference
The STD1NK60T4 is an N-Channel MOSFET in a DPAK package, manufactured by ST. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 1A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1A | Max current handling |
| Power Dissipation (Pd) | 30W | Max thermal limit |
| On-Resistance (Rds(on)) | 8.5ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.7V | Voltage required to turn on |
| Gate Charge (Qg) | 7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 156pF | Internal gate capacitance |
| Output Capacitance (Coss) | 23.5pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| STD16N60M2 | N-Channel | DPAK | 600V | 12A | 320mฮฉ@10V | 4V | ST ๐ PDF |
| TK10P60W | N-Channel | DPAK | 600V | 9.7A | 430mฮฉ@10V | 3.7V | TOSHIBA ๐ PDF |
| RVQ(S | N-Channel | DPAK | 600V | 7.5A | 600mฮฉ@10V | 4V | ST ๐ PDF |
| STD10N60M2 | N-Channel | DPAK | 600V | 4.5A | 1.8ฮฉ@10V | 3.3V | MCC ๐ PDF |
| MCU05N60A-TP | N-Channel | DPAK | 650V | 13A | 250mฮฉ@10V | 4V | onsemi ๐ PDF |