TK10P60W,RVQ(S MOSFET Datasheet & Specifications
N-Channel
DPAK
High-Voltage
TOSHIBA
Vds Max
600V
Id Max
9.7A
Rds(on)
430mΩ@10V
Vgs(th)
3.7V
Quick Reference
The TK10P60W,RVQ(S is an N-Channel MOSFET in a DPAK package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 9.7A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 9.7A | Max current handling |
| Power Dissipation (Pd) | 80W | Max thermal limit |
| On-Resistance (Rds(on)) | 430mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.7V | Voltage required to turn on |
| Gate Charge (Qg) | 20nC@10V | Switching energy |
| Input Capacitance (Ciss) | 700pF | Internal gate capacitance |
| Output Capacitance (Coss) | 20pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| STD16N60M2 | N-Channel | DPAK | 600V | 12A | 320mΩ@10V | 4V | ST 📄 PDF |
| NTD250N65S3H | N-Channel | DPAK | 650V | 13A | 250mΩ@10V | 4V | onsemi 📄 PDF |